Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

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Subtotal (1 pack of 5 units)*

$9.80

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$10.80

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5$1.96$9.80
10 - 20$1.902$9.51
25 - 95$1.846$9.23
100 - 495$1.79$8.95
500 +$1.734$8.67

*price indicative

Packaging Options:
RS Stock No.:
228-2840
Mfr. Part No.:
SiHA5N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

29W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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