Vishay E Type N-Channel MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

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Subtotal (1 pack of 2 units)*

$7.47

(exc. GST)

$8.216

(inc. GST)

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  • 668 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$3.735$7.47
10 - 18$3.625$7.25
20 - 24$3.52$7.04
26 - 98$3.41$6.82
100 +$3.305$6.61

*price indicative

Packaging Options:
RS Stock No.:
228-2837
Mfr. Part No.:
SIHA24N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

35W

Typical Gate Charge Qg @ Vgs

59nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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