Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3

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Bulk discount available

Subtotal (1 pack of 2 units)*

$9.45

(exc. GST)

$10.396

(inc. GST)

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Last RS stock
  • Final 944 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
2 - 8$4.725$9.45
10 - 18$4.59$9.18
20 - 24$4.455$8.91
26 - 98$4.32$8.64
100 +$4.195$8.39

*price indicative

Packaging Options:
RS Stock No.:
228-2847
Mfr. Part No.:
SIHB24N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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