Dual N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK Vishay SIHB120N60E-T5-GE3
- RS Stock No.:
- 228-2843
- Mfr. Part No.:
- SIHB120N60E-T5-GE3
- Brand:
- Vishay
On back order for despatch 02/09/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 800)
$4.86
(exc. GST)
$5.35
(inc. GST)
| Units | Per unit | Per Reel* |
| 800 - 3200 | $4.86 | $3,888.00 |
| 4000 + | $4.699 | $3,759.20 |
| *price indicative | ||
- RS Stock No.:
- 228-2843
- Mfr. Part No.:
- SIHB120N60E-T5-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | D2PAK (TO-263) |
| Series | E Series |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.12 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |