Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

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Subtotal (1 pack of 10 units)*

$31.93

(exc. GST)

$35.12

(inc. GST)

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  • 1,610 unit(s) ready to ship from another location
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Units
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Per Pack*
10 - 620$3.193$31.93
630 - 1240$3.114$31.14
1250 +$3.066$30.66

*price indicative

Packaging Options:
RS Stock No.:
217-2536
Mfr. Part No.:
IPD95R450P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

950V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

35nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

2.41mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and CossBest-in-class DPAK RDS(on) of 450 mΩ

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

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