Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252

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Subtotal (1 reel of 2500 units)*

$2,827.50

(exc. GST)

$3,110.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500$1.131$2,827.50
5000 - 5000$1.017$2,542.50
7500 +$0.916$2,290.00

*price indicative

RS Stock No.:
258-3839
Mfr. Part No.:
IPD35N12S3L24ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

120V

Series

IPD

Package Type

PG-TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

71W

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is power MOSFET for automotive applications. It has 175°C operating temperature.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

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