Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

$2,457.50

(exc. GST)

$2,702.50

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500$0.983$2,457.50
5000 - 5000$0.885$2,212.50
7500 +$0.796$1,990.00

*price indicative

RS Stock No.:
258-3848
Mfr. Part No.:
IPD60N10S412ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

94W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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