N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK Vishay SIHD11N80AE-GE3
- RS Stock No.:
- 210-4979
- Mfr. Part No.:
- SIHD11N80AE-GE3
- Brand:
- Vishay
2985 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$2.706
(exc. GST)
$2.977
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | $2.706 | $13.53 |
| 750 - 1495 | $2.638 | $13.19 |
| 1500 + | $2.602 | $13.01 |
*price indicative
- RS Stock No.:
- 210-4979
- Mfr. Part No.:
- SIHD11N80AE-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
The Vishay E Series Power MOSFET has DPAK (TO-252) package type with single configuration.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | DPAK (TO-252) |
| Series | E |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.391 Ω |
| Maximum Gate Threshold Voltage | 2 → 4V |
| Number of Elements per Chip | 1 |
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