Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

$3,508.00

(exc. GST)

$3,858.00

(inc. GST)

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Units
Per unit
Per Reel*
2000 - 8000$1.754$3,508.00
10000 +$1.579$3,158.00

*price indicative

RS Stock No.:
228-2848
Mfr. Part No.:
SIHD11N80AE-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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