Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3

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Subtotal (1 pack of 5 units)*

$19.75

(exc. GST)

$21.70

(inc. GST)

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Per Pack*
5 - 10$3.95$19.75
15 - 20$3.85$19.25
25 +$3.792$18.96

*price indicative

Packaging Options:
RS Stock No.:
210-4970
Mfr. Part No.:
SIHB15N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

304mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

158W

Maximum Operating Temperature

150°C

Height

4.06mm

Width

9.65 mm

Length

14.61mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 13 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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