Vishay SiDR680ADP Type N-Channel MOSFET, 137 A, 80 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

$6,645.00

(exc. GST)

$7,308.00

(inc. GST)

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  • Shipping from 11 January 2027
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Units
Per unit
Per Reel*
3000 - 3000$2.215$6,645.00
6000 - 9000$2.159$6,477.00
12000 +$2.126$6,378.00

*price indicative

RS Stock No.:
204-7257
Mfr. Part No.:
SIDR680ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiDR680ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.88mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

0.51mm

Standards/Approvals

No

Width

4.9 mm

Length

5.9mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low RDS - Qg figure-of-merit (FOM) and is tuned for the lowest RDS - Qoss FOM.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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