Vishay TrenchFET N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3

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Subtotal (1 pack of 5 units)*

$20.04

(exc. GST)

$22.04

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45$4.008$20.04
50 - 95$3.888$19.44
100 - 245$3.77$18.85
250 - 995$3.66$18.30
1000 +$3.552$17.76

*price indicative

Packaging Options:
RS Stock No.:
228-2916
Mfr. Part No.:
SIRA20BDP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

335A

Maximum Drain Source Voltage Vds

25V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

124nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

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