Vishay TrenchFET Type N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

$16.95

(exc. GST)

$18.65

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 2,980 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45$3.39$16.95
50 - 95$3.288$16.44
100 - 245$3.188$15.94
250 - 995$3.094$15.47
1000 +$3.002$15.01

*price indicative

Packaging Options:
RS Stock No.:
228-2916
Mfr. Part No.:
SIRA20BDP-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

335A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

124nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

Related links