N-Channel MOSFET, 4.4 A, 800 V, 3-Pin IPAK Vishay SIHU5N80AE-GE3
- RS Stock No.:
- 204-7229
- Mfr. Part No.:
- SIHU5N80AE-GE3
- Brand:
- Vishay
Available for back order.
Price (ex. GST) Each (In a Pack of 10)
$1.203
(exc. GST)
$1.323
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | $1.203 | $12.03 |
| 750 - 1490 | $1.173 | $11.73 |
| 1500 + | $1.156 | $11.56 |
*price indicative
- RS Stock No.:
- 204-7229
- Mfr. Part No.:
- SIHU5N80AE-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Avalanche energy rated (UIS)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.4 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | IPAK (TO-251) |
| Series | SiHU5N80AE |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.35 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Number of Elements per Chip | 1 |
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