Vishay E Type N-Channel Power MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220AB SIHP690N60E-GE3
- RS Stock No.:
- 200-6820
- Mfr. Part No.:
- SIHP690N60E-GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 50 units)*
$110.25
(exc. GST)
$121.30
(inc. GST)
FREE delivery for orders over $80.00 ex GST
Temporarily out of stock
- Shipping from 01 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 50 - 50 | $2.205 | $110.25 |
| 100 - 150 | $2.15 | $107.50 |
| 200 + | $2.117 | $105.85 |
*price indicative
- RS Stock No.:
- 200-6820
- Mfr. Part No.:
- SIHP690N60E-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 6.4A Maximum Continuous Drain Current - SIHP690N60E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management tasks in industrial electronics. It is supplied in a through-hole TO-220AB package suitable for heatsinking, and is intended for engineers working on control, conversion and protection circuits where robust voltage endurance and straightforward mounting are required.
Features and Benefits:
• 650V Vds for high-voltage switching capability • 6.4A continuous drain current enabling moderate load handling • 700mΩ Rds(on) for predictable conduction losses • 12nC typical gate charge for manageable switching energy • 62.5W power dissipation to support thermal design • 150°C maximum junction temperature for elevated-temperature operation
Applications
• Suitable for high-voltage switch-mode power supplies • Ideal for motor drive gate-stage circuits • Used for industrial inverter protection switching • Can be used for power-factor correction stages • Suitable for high-voltage relay and contactor driver circuits
What is the recommended gate voltage range for driving this device?
The device accepts gate voltages up to 30 V, so gate drivers should be chosen to remain within that limit and provide adequate drive for the specified gate charge.
How should thermal management be approached when mounting?
Use a compatible heatsink on the TO-220AB tab and ensure sufficient airflow
account for the 62.5W dissipation rating when calculating temperature rise.
What ambient conditions are acceptable for operation?
The component is specified to operate down to -55°C, while the maximum junction rating is 150°C, so designs must manage junction-to-ambient thermal resistance to stay within those bounds.
Are there considerations for switching losses at high voltage?
With a 12 nC gate charge and 700 mΩ Rds(on), designers should balance gate-drive speed against switching loss, particularly in applications that switch frequently at high Vds.
Related links
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHA690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3