Toshiba Type N-Channel MOSFET, 2 A, 40 V Enhancement, 3-Pin SOT-23 SSM3K339R
- RS Stock No.:
- 171-2471
- Mfr. Part No.:
- SSM3K339R
- Brand:
- Toshiba
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View bulk pricing optionsSubtotal (1 pack of 50 units)*
$14.50
(exc. GST)
$16.00
(inc. GST)
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In Stock
- 650 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | $0.29 | $14.50 |
| 750 - 1450 | $0.283 | $14.15 |
| 1500 + | $0.278 | $13.90 |
*price indicative
- RS Stock No.:
- 171-2471
- Mfr. Part No.:
- SSM3K339R
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.7mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.7mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
Power Management Switches
DC-DC Converters
1.8-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)
RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)
RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)
RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)
RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)
Related links
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