Toshiba Type N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 SSM3K329R,LF(T

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Subtotal (1 reel of 3000 units)*

$1,860.00

(exc. GST)

$2,040.00

(inc. GST)

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  • 12,000 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Reel*
3000 - 12000$0.62$1,860.00
15000 +$0.558$1,674.00

*price indicative

RS Stock No.:
236-3574
Mfr. Part No.:
SSM3K329R,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

289mΩ

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

1.5nC

Forward Voltage Vf

-0.9V

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.4mm

Height

0.8mm

Width

2.9 mm

Automotive Standard

No

The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in power management switching and high speed switching applications.

Storage temperature range −55 to 150 °C

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