N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30S-GE3

RS Stock No.:: 165-6091
Mfr. Part No.:: SIHFBC30S-GE3
Brand:: Vishay

N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30S-GE3

This image is representative of the product range

Discontinued product

RS Stock No.:: 165-6091
Mfr. Part No.:: SIHFBC30S-GE3
Brand:: Vishay

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L, Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.6 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.2 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	74 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	31 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	10.67mm
Transistor Material	Si
Width	9.65mm
Height	4.83mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30S-GE3

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

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