Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK Vishay SIHB080N60E-GE3

RS Stock No.:: 268-8289
Mfr. Part No.:: SIHB080N60E-GE3
Brand:: Vishay

Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK Vishay SIHB080N60E-GE3

Available for back order.

Price (ex. GST) Each (In a Tube of 50)

$6.509

(exc. GST)

$7.16

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$6.509	$325.45
100 - 450	$5.333	$266.65
500 - 950	$4.543	$227.15
1000 +	$3.818	$190.90

*price indicative

RS Stock No.:: 268-8289
Mfr. Part No.:: SIHB080N60E-GE3
Brand:: Vishay

Technical data sheets

Datasheet - SIHB080N60E-GE3

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance
Avalanche energy rated
Low figure of merit

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	600 V
Package Type	TO-263
Mounting Type	Surface Mount
Pin Count	3
Channel Mode	Enhancement
Number of Elements per Chip	2
Transistor Material	Silicon