Infineon IPP Type N-Channel Power Transistor, 98 A, 135 V Enhancement, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1

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Subtotal (1 pack of 5 units)*

$28.39

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$31.23

(inc. GST)

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5 - 45$5.678$28.39
50 - 95$5.394$26.97
100 +$4.992$24.96

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RS Stock No.:
349-117
Mfr. Part No.:
IPP073N13NM6AKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

98A

Maximum Drain Source Voltage Vds

135V

Package Type

PG-TO220-3

Series

IPP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

158W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed to deliver high efficiency in power applications. Key features include very low on-resistance (RDS(on)), which minimizes conduction losses, and an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts very low reverse recovery charge (Qrr), enhancing efficiency and reducing switching losses. The device is equipped with a high avalanche energy rating, making it suitable for demanding conditions, and can operate at a high temperature of 175°C, ensuring reliability even in harsh environments.

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

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