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STMicroelectronics STGYA50H120DF2 IGBT 1.2 kV, 3-Pin

RS Stock No.:: 244-3194
Mfr. Part No.:: STGYA50H120DF2
Brand:: STMicroelectronics

STMicroelectronics STGYA50H120DF2 IGBT 1.2 kV, 3-Pin

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Subtotal (1 tube of 30 units)*

$324.33

(exc. GST)

$356.76

(inc. GST)

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In Stock

270 unit(s) ready to ship from another location

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Units	Per unit	Per Tube*	Saving
30 - 30	$10.811	$324.33	-
60 - 60	$10.552	$316.56	2%
90 +	$10.299	$308.97	4%

*price indicative

RS Stock No.:: 244-3194
Mfr. Part No.:: STGYA50H120DF2
Brand:: STMicroelectronics

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	535W
	Pin Count	3
	Switching Speed	5μs
	Maximum Gate Emitter Voltage VGEO	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Series	H
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 535W
	Pin Count 3
	Switching Speed 5μs
	Maximum Gate Emitter Voltage VGEO ±20 V
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Series H
	Automotive Standard No

Datasheet - STGYA50H120DF2ST

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode