Infineon 16 kB Serial-I2C FRAM 8-Pin SOIC-8, FM24C16B-G

RS Stock No.:: 273-7376
Mfr. Part No.:: FM24C16B-G
Brand:: Infineon

Infineon 16 kB Serial-I2C FRAM 8-Pin SOIC-8, FM24C16B-G

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Subtotal (1 tube of 97 units)*

$287.99

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$316.80

(inc. GST)

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Shipping from 12 April 2027

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Units	Per unit	Per Tube*	Saving
97 - 97	$2.969	$287.99	-
194 +	$2.577	$249.97	$76.05

*price indicative

RS Stock No.:: 273-7376
Mfr. Part No.:: FM24C16B-G
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Memory Size	16kB
	Product Type	FRAM
	Organisation	2K x 8 bit
	Interface Type	Serial-I2C
	Data Bus Width	8bit
	Maximum Clock Frequency	1MHz
	Package Type	SOIC-8
	Pin Count	8
	Standards/Approvals	RoHS
	Maximum Operating Temperature	85°C
	Minimum Operating Temperature	-40°C
	Maximum Supply Voltage	5.5V
	Automotive Standard	No
	Number of Words	2k
	Minimum Supply Voltage	4.5V
	Number of Bits per Word	8

	Select all
	Brand Infineon
	Memory Size 16kB
	Product Type FRAM
	Organisation 2K x 8 bit
	Interface Type Serial-I2C
	Data Bus Width 8bit
	Maximum Clock Frequency 1MHz
	Package Type SOIC-8
	Pin Count 8
	Standards/Approvals RoHS
	Maximum Operating Temperature 85°C
	Minimum Operating Temperature -40°C
	Maximum Supply Voltage 5.5V
	Automotive Standard No
	Number of Words 2k
	Minimum Supply Voltage 4.5V
	Number of Bits per Word 8

Datasheet - FM24C16B-G

The Infineon FRAM is a 16 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.

RoHS compliant

Low power consumption

Fast 2 wire Serial interface

High endurance 100 trillion read and write

Advanced high reliability ferroelectric process