Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24CL64B-G

RS Stock No.:: 188-5402
Mfr. Part No.:: FM24CL64B-G
Brand:: Infineon

Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24CL64B-G

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Subtotal (1 tube of 97 units)*

$375.88

(exc. GST)

$413.41

(inc. GST)

FREE delivery for orders over $80.00 ex GST

In Stock

97 unit(s) ready to ship from another location
Plus 2,910 unit(s) shipping from 29 April 2027

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Units	Per unit	Per Tube*
97 - 97	$3.875	$375.88
194 - 291	$3.778	$366.47
388 +	$3.72	$360.84

*price indicative

RS Stock No.:: 188-5402
Mfr. Part No.:: FM24CL64B-G
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	FRAM
	Memory Size	64kB
	Organisation	8K x 8 bit
	Interface Type	2 Wire I2C
	Data Bus Width	8bit
	Maximum Random Access Time	550ns
	Mount Type	Surface
	Maximum Clock Frequency	1MHz
	Package Type	SOIC
	Pin Count	8
	Width	3.98mm
	Standards/Approvals	No
	Length	4.97mm
	Height	1.38mm
	Maximum Operating Temperature	85°C
	Maximum Supply Voltage	3.65V
	Minimum Supply Voltage	2.7V
	Number of Bits per Word	8
	Minimum Operating Temperature	-40°C
	Number of Words	8K
	Automotive Standard	AEC-Q100

	Select all
	Brand Infineon
	Product Type FRAM
	Memory Size 64kB
	Organisation 8K x 8 bit
	Interface Type 2 Wire I2C
	Data Bus Width 8bit
	Maximum Random Access Time 550ns
	Mount Type Surface
	Maximum Clock Frequency 1MHz
	Package Type SOIC
	Pin Count 8
	Width 3.98mm
	Standards/Approvals No
	Length 4.97mm
	Height 1.38mm
	Maximum Operating Temperature 85°C
	Maximum Supply Voltage 3.65V
	Minimum Supply Voltage 2.7V
	Number of Bits per Word 8
	Minimum Operating Temperature -40°C
	Number of Words 8K
	Automotive Standard AEC-Q100

Datasheet FM24CL64B-G

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.