Infineon BFR740L3RHE6327XTSA1 NPN RF Bipolar Transistor, 40 mA NPN, 4 V, 4-Pin TSLP
- RS Stock No.:
- 219-5959
- Mfr. Part No.:
- BFR740L3RHE6327XTSA1
- Brand:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | $0.653 | $9.80 |
| 30 - 75 | $0.641 | $9.62 |
| 90 - 225 | $0.628 | $9.42 |
| 240 - 465 | $0.617 | $9.26 |
| 480 + | $0.605 | $9.08 |
*price indicative
- RS Stock No.:
- 219-5959
- Mfr. Part No.:
- BFR740L3RHE6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | NPN RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 4V | |
| Package Type | TSLP | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Power Dissipation Pd | 160mW | |
| Maximum Transition Frequency ft | 42GHz | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFR740L3RH | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type NPN RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 4V | ||
Package Type TSLP | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Power Dissipation Pd 160mW | ||
Maximum Transition Frequency ft 42GHz | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFR740L3RH | ||
Automotive Standard No | ||
The Infineon BFP740L3RH is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).
Low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mA
High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA
Low profile and small form factor leadless package
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