Intelligent Memory IME1G08D3EEBG-15EI SDRAM 1 GB Surface, 78-Pin 16 bit FBGA-78 Ball
- RS Stock No.:
- 588-649
- Mfr. Part No.:
- IME1G08D3EEBG-15EI
- Brand:
- Intelligent Memory
Subtotal (1 unit)*
$13.66
(exc. VAT)
$15.03
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 + | $13.66 |
*price indicative
- RS Stock No.:
- 588-649
- Mfr. Part No.:
- IME1G08D3EEBG-15EI
- Brand:
- Intelligent Memory
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Product Type | SDRAM | |
| Memory Size | 1GB | |
| Organisation | 16M x 8 | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 800MHz | |
| Maximum Random Access Time | 1.25ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA-78 Ball | |
| Pin Count | 78 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Length | 10.5mm | |
| Series | IME1G(08/16)D3EEB | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | AEC-Q100 | |
| Maximum Supply Voltage | 1.575V | |
| Minimum Supply Voltage | 1.425V | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Product Type SDRAM | ||
Memory Size 1GB | ||
Organisation 16M x 8 | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 800MHz | ||
Maximum Random Access Time 1.25ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA-78 Ball | ||
Pin Count 78 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Length 10.5mm | ||
Series IME1G(08/16)D3EEB | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard AEC-Q100 | ||
Maximum Supply Voltage 1.575V | ||
Minimum Supply Voltage 1.425V | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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