Intelligent Memory IM4G08D3FDBG-107I SDRAM 4 GB Surface, 78-Pin 16 bit FBGA-78 Ball
- RS Stock No.:
- 588-646
- Mfr. Part No.:
- IM4G08D3FDBG-107I
- Brand:
- Intelligent Memory
Subtotal (1 unit)*
$8.91
(exc. GST)
$9.80
(inc. GST)
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- 20 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 + | $8.91 |
*price indicative
- RS Stock No.:
- 588-646
- Mfr. Part No.:
- IM4G08D3FDBG-107I
- Brand:
- Intelligent Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Product Type | SDRAM | |
| Memory Size | 4GB | |
| Organisation | 64M x 8 | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 8 | |
| Maximum Clock Frequency | 1066MHz | |
| Maximum Random Access Time | 1.25ns | |
| Mount Type | Surface | |
| Package Type | FBGA-78 Ball | |
| Pin Count | 78 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Standards/Approvals | RoHS | |
| Width | 7.5 mm | |
| Length | 10.6mm | |
| Height | 1.2mm | |
| Series | IM4G(04/08)D3FDB | |
| Minimum Supply Voltage | 1.283V | |
| Maximum Supply Voltage | 1.45V | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Product Type SDRAM | ||
Memory Size 4GB | ||
Organisation 64M x 8 | ||
Data Bus Width 16bit | ||
Number of Bits per Word 8 | ||
Maximum Clock Frequency 1066MHz | ||
Maximum Random Access Time 1.25ns | ||
Mount Type Surface | ||
Package Type FBGA-78 Ball | ||
Pin Count 78 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Standards/Approvals RoHS | ||
Width 7.5 mm | ||
Length 10.6mm | ||
Height 1.2mm | ||
Series IM4G(04/08)D3FDB | ||
Minimum Supply Voltage 1.283V | ||
Maximum Supply Voltage 1.45V | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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