onsemi 1200 V 26 A Diode 2-Pin TO-247-2LD NDSH20120C-F155
- RS Stock No.:
- 218-673
- Mfr. Part No.:
- NDSH20120C-F155
- Brand:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 1 unit)*
$14.08
(exc. GST)
$15.49
(inc. GST)
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Temporarily out of stock
- Shipping from 01 May 2026
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Pack(s) | Per Pack |
|---|---|
| 1 - 9 | $14.08 |
| 10 - 99 | $12.67 |
| 100 - 499 | $11.68 |
| 500 - 999 | $10.84 |
| 1000 + | $9.71 |
*price indicative
- RS Stock No.:
- 218-673
- Mfr. Part No.:
- NDSH20120C-F155
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 26A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | NDSH | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 896A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 26A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series NDSH | ||
Pin Count 2 | ||
Peak Reverse Current Ir 200μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 896A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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