N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF
- RS Stock No.:
- 919-4817
- Mfr. Part No.:
- IRF640NPBF
- Manufacturer:
- Infineon
View all MOSFETs
Available for back order.
Price (ex. GST) Each (In a Tube of 50)
$2.371
(exc. GST)
$2.608
(inc. GST)
| units | Per unit | Per Tube* |
| 50 - 50 | $2.371 | $118.55 |
| 100 - 150 | $2.333 | $116.65 |
| 200 + | $2.277 | $113.85 |
| *price indicative | ||
- RS Stock No.:
- 919-4817
- Mfr. Part No.:
- IRF640NPBF
- Manufacturer:
- Infineon
- COO (Country of Origin):
- MX
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
N-Channel Power MOSFET 150V to 600V, Infineon
Specifications
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 150 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |
| Height | 8.77mm |