N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

RS Stock No.:: 919-4817
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

Available for back order.

Added

Price (ex. GST) Each (In a Tube of 50)

$1.827

(exc. GST)

$2.01

(inc. GST)

units	Per unit	Per Tube*
50 - 50	$1.827	$91.35
100 - 150	$1.797	$89.85
200 +	$1.755	$87.75
*price indicative

RS Stock No.:: 919-4817
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

COO (Country of Origin):: MX

Technical data sheets

Schematic Symbol & PCB Footprint

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	67 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Series	HEXFET
Height	8.77mm