N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG30PBF
- RS Stock No.:
- 919-4508
- Mfr. Part No.:
- IRFBG30PBF
- Brand:
- Vishay
1964 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$2.988
(exc. GST)
$3.287
(inc. GST)
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | $2.988 | $149.40 |
100 - 150 | $2.913 | $145.65 |
200 + | $2.868 | $143.40 |
*price indicative
- RS Stock No.:
- 919-4508
- Mfr. Part No.:
- IRFBG30PBF
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 3.1 A |
Maximum Drain Source Voltage | 1000 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 5 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Length | 10.41mm |
Typical Gate Charge @ Vgs | 80 nC @ 10 V |
Width | 4.7mm |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 9.01mm |
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