N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG30PBF

RS Stock No.:: 541-1146
Mfr. Part No.:: IRFBG30PBF
Brand:: Vishay

N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG30PBF

8 In AU stock for next working day delivery

125 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$3.87

(exc. GST)

$4.26

(inc. GST)

Units	Per unit
1 - 12	$3.87
13 - 24	$3.80
25 +	$3.74

RS Stock No.:: 541-1146
Mfr. Part No.:: IRFBG30PBF
Brand:: Vishay

Technical data sheets

Legislation and Compliance

Product Details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.1 A
Maximum Drain Source Voltage	1000 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.7mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	80 nC @ 10 V
Transistor Material	Si
Length	10.41mm
Height	9.01mm
Minimum Operating Temperature	-55 °C