Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

RS Stock No.:: 913-3932
Mfr. Part No.:: IRFB4227PBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

$99.45

(exc. GST)

$109.40

(inc. GST)

FREE delivery for orders over $60.00 ex GST

Temporarily out of stock

950 unit(s) shipping from 15 January 2026

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Units	Per unit	Per Tube*
50 - 50	$1.989	$99.45
100 - 150	$1.966	$98.30
200 +	$1.921	$96.05

*price indicative

RS Stock No.:: 913-3932
Mfr. Part No.:: IRFB4227PBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	330W
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	9.02mm
	Width	4.82 mm
	Length	10.66mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 330W
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 9.02mm
	Width 4.82 mm
	Length 10.66mm
	Automotive Standard No

COO (Country of Origin):: CN

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