Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF

RS Stock No.:: 650-4277
Mfr. Part No.:: IRFB4227PBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF

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$3.55

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$3.90

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989 unit(s) shipping from 22 January 2026

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Units	Per unit
1 - 12	$3.55
13 - 24	$3.49
25 +	$3.43

*price indicative

RS Stock No.:: 650-4277
Mfr. Part No.:: IRFB4227PBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Power Dissipation Pd	330W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	175°C
	Height	9.02mm
	Length	10.66mm
	Standards/Approvals	No
	Width	4.82 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Power Dissipation Pd 330W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 175°C
	Height 9.02mm
	Length 10.66mm
	Standards/Approvals No
	Width 4.82 mm
	Automotive Standard No

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