Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF
- RS Stock No.:
- 650-4277
- Mfr. Part No.:
- IRFB4227PBF
- Brand:
- Infineon
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Subtotal (1 unit)*
$3.76
(exc. GST)
$4.14
(inc. GST)
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- 24 unit(s) ready to ship from another location
- Plus 37 unit(s) shipping from 03 November 2026
- Plus 28 unit(s) shipping from 04 November 2026
Units | Per unit |
|---|---|
| 1 - 12 | $3.76 |
| 13 - 24 | $3.70 |
| 25 + | $3.64 |
*price indicative
- RS Stock No.:
- 650-4277
- Mfr. Part No.:
- IRFB4227PBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 330W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82mm | |
| Standards/Approvals | RoHS | |
| Length | 10.66mm | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 330W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.82mm | ||
Standards/Approvals RoHS | ||
Length 10.66mm | ||
Height 9.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 65A Maximum Continuous Drain Current - IRFB4227PBF
Features and Benefits:
• 330W power dissipation enables sustained thermal load handling
• 70nC gate charge allows Faster switching transitions
• 30V gate tolerance supports robust gate-drive margins
• -40°C to 175°C rating sustains wide operating environments
Applications
• Ideal for switch-mode power supplies and converters
• Used with battery management and power distribution systems
• Can be used for industrial inverter stages
• Suitable for general-purpose power switching on through-hole boards
What is the devices package and mounting style?
What operating temperature extremes can it withstand?
How does the device address regulatory material restrictions?
What is the channel type and conduction mode?
What are the gate and drain voltage limits?
Related links
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- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
