N-Channel MOSFET, 295 A, 60 V, 3-Pin D2PAK Infineon IRFS7530PBF

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Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	295 A
Maximum Drain Source Voltage	60 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.1 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.69mm
Transistor Material	Si
Typical Gate Charge @ Vgs	274 nC @ 10 V
Length	10.54mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Series	HEXFET
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	9.65mm