N-Channel MOSFET, 295 A, 60 V, 3-Pin D2PAK Infineon IRFS7530PBF

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Packaging Options:
RS Stock No.:
907-5126
Mfr. Part No.:
IRFS7530PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

295 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.69mm

Length

10.54mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

274 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Forward Diode Voltage

1.2V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

9.65mm

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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