N-Channel MOSFET Transistor, 195 A, 270 A, 60 V, 3-Pin D2PAK Infineon AUIRLS3036

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Packaging Options:
RS Stock No.:
784-9240
Mfr. Part No.:
AUIRLS3036
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A, 270 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

91 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.65mm

Length

10.67mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

4.83mm

COO (Country of Origin):
MX

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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