N-Channel MOSFET, 31 A, 600 V, 3-Pin D2PAK Infineon IPB60R099CPAATMA1

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Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	105 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	20V
Minimum Gate Threshold Voltage	20V
Maximum Power Dissipation	255 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.45mm
Transistor Material	Si
Length	10.31mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	60 nC @ 10 V
Number of Elements per Chip	1
Height	4.57mm
Series	CoolMOS CP
Minimum Operating Temperature	-40 °C