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Infineon CoolMOS C3 N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK SPB11N60C3ATMA1

RS Stock No.:: 752-8473
Mfr. Part No.:: SPB11N60C3ATMA1
Brand:: Infineon

Infineon CoolMOS C3 N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK SPB11N60C3ATMA1

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Subtotal (1 unit)*

$5.05

(exc. GST)

$5.56

(inc. GST)

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Units	Per unit
1 - 9	$5.05
10 - 49	$4.71
50 - 99	$4.43
100 - 249	$4.12
250 +	$3.98

*price indicative

RS Stock No.:: 752-8473
Mfr. Part No.:: SPB11N60C3ATMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	11 A
	Maximum Drain Source Voltage	650 V
	Package Type	D2PAK (TO-263)
	Series	CoolMOS C3
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	380 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.9V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	125 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Length	10.31mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	45 nC @ 10 V
	Width	9.45mm
	Height	4.57mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 11 A
	Maximum Drain Source Voltage 650 V
	Package Type D2PAK (TO-263)
	Series CoolMOS C3
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 380 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.9V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 125 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Length 10.31mm
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 45 nC @ 10 V
	Width 9.45mm
	Height 4.57mm
	Minimum Operating Temperature -55 °C

Infineon CoolMOS C3 N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK SPB11N60C3ATMA1

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