N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB100N10S305ATMA1

RS Stock No.:: 823-5649
Mfr. Part No.:: IPB100N10S305ATMA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB100N10S305ATMA1

999999999 In AU stock for next working day delivery

999999999 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 2)

$5.86

(exc. GST)

$6.45

(inc. GST)

Units	Per unit	Per Pack*
2 - 8	$5.86	$11.72
10 - 38	$5.71	$11.42
40 - 98	$5.455	$10.91
100 - 198	$4.98	$9.96
200 +	$4.485	$8.97

*price indicative

RS Stock No.:: 823-5649
Mfr. Part No.:: IPB100N10S305ATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	OptiMOS 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	10mm
Width	9.25mm
Typical Gate Charge @ Vgs	135 nC @ 10 V
Height	4.4mm
Minimum Operating Temperature	-55 °C