N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK Infineon IRF540NLPBF
- RS Stock No.:
- 907-5028
- Mfr. Part No.:
- IRF540NLPBF
- Brand:
- Infineon
60 In AU stock for next working day delivery
50 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 10)
Was $22.14
You pay
$2.097
(exc. GST)
$2.307
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 10 | $2.097 | $20.97 |
| 20 - 20 | $2.061 | $20.61 |
| 30 + | $2.021 | $20.21 |
| *price indicative | ||
- RS Stock No.:
- 907-5028
- Mfr. Part No.:
- IRF540NLPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | I2PAK (TO-262) |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 44 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 130 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V |
| Width | 4.83mm |
| Transistor Material | Si |
| Height | 9.65mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
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