Infineon HEXFET N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 IRF540NSTRRPBF
- RS Stock No.:
- 831-2840
- Mfr. Part No.:
- IRF540NSTRRPBF
- Brand:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 190 | $2.606 | $26.06 |
| 200 - 390 | $2.54 | $25.40 |
| 400 + | $2.497 | $24.97 |
*price indicative
- RS Stock No.:
- 831-2840
- Mfr. Part No.:
- IRF540NSTRRPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 130W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 130W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF
This N-channel power MOSFET is specifically designed for high-efficiency applications, delivering significant performance in various electronic systems. It excels in high-current environments, where reliability and low resistance are essential. Its enhancements make it particularly useful in industries focused on automation and power management.
Features & Benefits
• Low RDS(on) minimises power losses during operation
• Continuous drain current capability of 33A supports various applications
• Wide gate-source voltage range provides design flexibility
• Withstands high temperatures up to 175°C
• Fast switching improves overall circuit efficiency
• D2PAK surface mount design facilitates PCB integration
Applications
• Used in power management circuits for automation
• Commonly implemented in DC-DC converters for energy efficiency
• Suitable for motor drive that require high current
• Found in power supply modules for industrial electronics
• Appropriate for automotive due to robust thermal performance
What is the significance of low RDS(on) in operation?
Low RDS(on) reduces heat generation and enhances energy efficiency, which is Crucial for extending component life and lowering operating expenses.
How does the MOSFET perform at higher temperatures?
It operates reliably up to 175°C, ensuring stability in extreme conditions while meeting performance demands without failure.
Can this device handle pulsed currents, and what are the specifications?
It supports pulsed drain currents up to 110A, effectively managing short bursts of high power, making it Ideal for applications with fluctuating load conditions.
What are the implications of the specified gate threshold voltage?
The gate threshold voltage range of 2V to 4V indicates the voltage needed to start conduction, providing essential information for design integration in control circuits.
How does the D2PAK package affect its usability?
The D2PAK package design promotes efficient heat dissipation and simplifies surface mount assembly, making it suitable for high-power applications on Compact PCBs.
Related links
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