N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK Infineon IRF540NLPBF

RS Stock No.:: 165-8115
Mfr. Part No.:: IRF540NLPBF
Brand:: Infineon

N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK Infineon IRF540NLPBF

Price (ex. GST) Each (In a Tube of 50)

$2.26

(exc. GST)

$2.49

(inc. GST)

Available for back order.

Units	Per unit	Per Tube*
50 - 200	$2.26	$113.00
250 +	$2.034	$101.70

*price indicative

RS Stock No.:: 165-8115
Mfr. Part No.:: IRF540NLPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	44 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	10.67mm
Typical Gate Charge @ Vgs	71 nC @ 10 V
Width	4.83mm
Height	9.65mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V