N-Channel MOSFET, 50 A, 100 V, 3-Pin I2PAK Infineon IPI50N10S3L16AKSA1

RS Stock No.:: 857-4685
Mfr. Part No.:: IPI50N10S3L16AKSA1
Brand:: Infineon

N-Channel MOSFET, 50 A, 100 V, 3-Pin I2PAK Infineon IPI50N10S3L16AKSA1

999999999 In AU stock for next working day delivery

999999999 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 500)

$1.76

(exc. GST)

$1.94

(inc. GST)

Units	Per unit	Per Tube*
500 - 500	$1.76	$880.00
1000 - 2000	$1.748	$874.00
2500 +	$1.73	$865.00

*price indicative

RS Stock No.:: 857-4685
Mfr. Part No.:: IPI50N10S3L16AKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	100 V
Package Type	I2PAK (TO-262)
Series	OptiMOS™-T
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	29 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.4V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	10mm
Typical Gate Charge @ Vgs	49 nC @ 10 V
Transistor Material	Si
Width	4.4mm
Height	9.25mm
Minimum Operating Temperature	-55 °C