Infineon OptiMOS™-T N-Channel MOSFET, 50 A, 100 V, 3-Pin I2PAK IPI50N10S3L16AKSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Package Type

I2PAK (TO-262)

Series

OptiMOS™-T

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.4mm

Minimum Operating Temperature

-55 °C

Height

9.25mm