N-Channel MOSFET, 90 A, 40 V, 3-Pin I2PAK Infineon IPI90N04S402AKSA1

RS Stock No.:: 857-6811
Mfr. Part No.:: IPI90N04S402AKSA1
Brand:: Infineon

N-Channel MOSFET, 90 A, 40 V, 3-Pin I2PAK Infineon IPI90N04S402AKSA1

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Price (ex. GST) Each (In a Tube of 500)

$2.211

(exc. GST)

$2.432

(inc. GST)

Units	Per unit	Per Tube*
500 - 500	$2.211	$1,105.50
1000 - 2000	$2.196	$1,098.00
2500 +	$2.18	$1,090.00

*price indicative

RS Stock No.:: 857-6811
Mfr. Part No.:: IPI90N04S402AKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	90 A
Maximum Drain Source Voltage	40 V
Package Type	I2PAK (TO-262)
Series	OptiMOS T2
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	91 nC @ 10 V
Width	4.4mm
Length	10mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Height	9.25mm
Minimum Operating Temperature	-55 °C