N-Channel MOSFET, 80 A, 55 V, 3-Pin I2PAK Infineon IPI80N06S207AKSA1
- RS Stock No.:
- 857-6760
- Mfr. Part No.:
- IPI80N06S207AKSA1
- Brand:
- Infineon
999999999 In AU stock for next working day delivery
999999999 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 500)
$1.794
(exc. GST)
$1.973
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | $1.794 | $897.00 |
| 1000 - 2000 | $1.785 | $892.50 |
| 2500 + | $1.769 | $884.50 |
*price indicative
- RS Stock No.:
- 857-6760
- Mfr. Part No.:
- IPI80N06S207AKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
Product Details
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 55 V |
| Series | OptiMOS™ |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 6.6 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 250 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.4mm |
| Typical Gate Charge @ Vgs | 86 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 9.25mm |
Related links
- N-Channel MOSFET, 80 A, 55 V, 3-Pin I2PAK Infineon IPI80N06S208AKSA1
- N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK Infineon IRF3205ZLPBF
- N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1
- N-Channel MOSFET, 80 A, 40 V, 3-Pin I2PAK Infineon IPI80N04S404AKSA1
- N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK Infineon IPI80N06S407AKSA2
- N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK Infineon IPI80N06S4L07AKSA2
- P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK Infineon IRF4905LPBF
- N-Channel MOSFET, 70 A, 40 V, 3-Pin I2PAK Infineon IPI70N04S406AKSA1