N-Channel MOSFET, 75 A, 40 V, 3-Pin I2PAK Infineon IRF2804LPBF

RS Stock No.:: 178-1475
Mfr. Part No.:: IRF2804LPBF
Brand:: Infineon

N-Channel MOSFET, 75 A, 40 V, 3-Pin I2PAK Infineon IRF2804LPBF

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Price (ex. GST) Each (In a Tube of 50)

$4.865

(exc. GST)

$5.351

(inc. GST)

Units	Per unit	Per Tube*
50 +	$4.865	$243.25
*price indicative

RS Stock No.:: 178-1475
Mfr. Part No.:: IRF2804LPBF
Brand:: Infineon

Technical data sheets

IRF2804SPbF, IRF2804LPbF AUTOMOTIVE MOSFET Data Sheet

Legislation and Compliance

Product Details

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	75 A
Maximum Drain Source Voltage	40 V
Series	HEXFET
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	160 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	10.54mm