STMicroelectronics MDmesh M2 N-Channel MOSFET, 32 A, 650 V, 3-Pin I2PAK STI40N65M2
- RS Stock No.:
- 876-5676
- Mfr. Part No.:
- STI40N65M2
- Brand:
- STMicroelectronics
This image is representative of the product range
Stock information currently inaccessible
- RS Stock No.:
- 876-5676
- Mfr. Part No.:
- STI40N65M2
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 32 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | MDmesh M2 | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 99 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 56.5 nC @ 10 V | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Height | 9.35mm | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 650 V | ||
Series MDmesh M2 | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 99 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.6mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 56.5 nC @ 10 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Height 9.35mm | ||
Forward Diode Voltage 1.6V | ||
- COO (Country of Origin):
- CN
Related links
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh M2 Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics MDmesh M2 Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220FP STF12N65M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD6N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247