N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC Vishay SQ4850EY-T1_GE3
- RS Stock No.:
- 819-3923
- Mfr. Part No.:
- SQ4850EY-T1_GE3
- Brand:
- Vishay
On back order for despatch 20/12/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 20)
$1.475
(exc. GST)
$1.623
(inc. GST)
| Units | Per unit | Per Pack* |
| 20 + | $1.475 | $29.50 |
| *price indicative | ||
- RS Stock No.:
- 819-3923
- Mfr. Part No.:
- SQ4850EY-T1_GE3
- Brand:
- Vishay
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
Approvals
AEC-Q101
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage | 60 V |
| Series | SQ Rugged |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 47 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 6.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Length | 5mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1.55mm |
| Automotive Standard | AEC-Q101 |