Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

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$30.98

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$34.08

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  • Plus 4,940 unit(s) shipping from 13 February 2026
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Per Pack*
20 - 620$1.549$30.98
640 - 1240$1.511$30.22
1260 +$1.487$29.74

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Packaging Options:
RS Stock No.:
818-1302
Mfr. Part No.:
SI4909DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

41.5nC

Maximum Power Dissipation Pd

3.2W

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1.55mm

Width

4 mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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