Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

RS Stock No.:: 818-1302
Mfr. Part No.:: SI4909DY-T1-GE3
Brand:: Vishay

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

This image is representative of the product range

5480 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 20)

$1.349

(exc. GST)

$1.484

(inc. GST)

Units	Per unit	Per Pack*
20 - 620	$1.349	$26.98
640 - 1240	$1.316	$26.32
1260 +	$1.296	$25.92

*price indicative

RS Stock No.:: 818-1302
Mfr. Part No.:: SI4909DY-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual P-Channel MOSFET, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	34 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3.2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Transistor Material	Si
Typical Gate Charge @ Vgs	41.5 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Width	4mm
Height	1.55mm
Minimum Operating Temperature	-55 °C