P-Channel MOSFET, 4 A, 12 V, 6-Pin SOT-363 Vishay SI1401EDH-T1-GE3

RS Stock No.:: 180-7898
Mfr. Part No.:: SI1401EDH-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 4 A, 12 V, 6-Pin SOT-363 Vishay SI1401EDH-T1-GE3

3000 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 25)

$0.536

(exc. GST)

$0.59

(inc. GST)

Units	Per unit	Per Pack*
25 - 725	$0.536	$13.40
750 - 1475	$0.522	$13.05
1500 +	$0.514	$12.85
*price indicative

RS Stock No.:: 180-7898
Mfr. Part No.:: SI1401EDH-T1-GE3
Brand:: Vishay

Technical data sheets

Datasheet

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 12V and a maximum gate-source voltage of 10V. It has drain-source resistance of 34mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 2.8W and continuous drain current of 4A. The minimum and a maximum driving voltage for this transistor are 1.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V

Applications

• Cellular phone
• DSC
• GPS
• Load switch
• MP3
• PA switch and battery switch for portable devices
• Portable game console

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	12 V
Package Type	SOT-363
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	0.034 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Number of Elements per Chip	1