Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- RS Stock No.:
- 787-9443
- Mfr. Part No.:
- SQ2310ES-T1_BE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
$12.64
(exc. GST)
$13.90
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Being discontinued
- Plus 60 unit(s) shipping from 29 December 2025
- Final 1,860 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | $1.264 | $12.64 |
| 750 - 1490 | $1.242 | $12.42 |
| 1500 + | $1.218 | $12.18 |
*price indicative
- RS Stock No.:
- 787-9443
- Mfr. Part No.:
- SQ2310ES-T1_BE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SQ Rugged | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS: 2002/95/EC | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SQ Rugged | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Standards/Approvals IEC 61249-2-21, RoHS: 2002/95/EC | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
- Vishay SQ Rugged N-Channel MOSFET 20 V, 3-Pin SOT-23 SQ2310ES-T1_BE3
- Vishay SQ Rugged N-Channel MOSFET 20 V, 6-Pin TSOP-6 SQ3460EV-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 40 V, 3-Pin DPAK SQD100N04-3M6L_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V, 3-Pin DPAK SQD25N06-22L_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V, 8-Pin SOIC SQ4850EY-T1-GE3
- Vishay SQ Rugged N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ412EP-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V, 8-Pin SOIC SQ4850EY-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 50 V, 3-Pin DPAK SQD50N05-11L_GE3
