Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS Stock No.:: 787-8995
Mfr. Part No.:: SI9945BDY-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

60 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 10)

$1.125

(exc. GST)

$1.237

(inc. GST)

Units	Per unit	Per Pack*
10 +	$1.125	$11.25

*price indicative

RS Stock No.:: 787-8995
Mfr. Part No.:: SI9945BDY-T1-GE3
Brand:: Vishay

Si9945BDY, Dual N-Channel 60V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	4mm
Length	5mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	13 nC @ 10 V
Transistor Material	Si
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor

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