onsemi UniFET N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 FDP12N60NZ
- RS Stock No.:
- 759-9175
- Mfr. Part No.:
- FDP12N60NZ
- Brand:
- onsemi
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- RS Stock No.:
- 759-9175
- Mfr. Part No.:
- FDP12N60NZ
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Series | UniFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 12 A | |
| Maximum Drain Source Voltage (Vds) | 600 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.4 V | |
| Height | 16.51 mm | |
| Length | 10.67 mm | |
| Maximum Drain Source Resistance (Rds) | 650 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -30 V, +30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 240 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 26 nC | |
| Width | 4.83 mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Series UniFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 12 A | ||
Maximum Drain Source Voltage (Vds) 600 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.4 V | ||
Height 16.51 mm | ||
Length 10.67 mm | ||
Maximum Drain Source Resistance (Rds) 650 mΩ | ||
Maximum Gate Source Voltage (Vgs) -30 V, +30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 240 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 26 nC | ||
Width 4.83 mm | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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